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    • 专利摘要:
    There is provided a chemical-mechanical polishing felt containing a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having 5.5 to 9.5 wt% of unreacted NCO groups, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: a polyfunctional aromatic isocyanate; and a prepolymer polyol; and, a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. Methods for making and using the chemical mechanical polishing felt are also provided.
    公开号:FR3020297A1
    申请号:FR1553824
    申请日:2015-04-28
    公开日:2015-10-30
    发明作者:Bainian Qian；Marty Degroot
    申请人:Rohm and Haas Electronic Materials CMP Holdings Inc；Dow Global Technologies LLC；Rohm and Haas Electronic Materials LLC；
    IPC主号:
    专利说明:

    [0001] The present invention relates to a mechano-chemical polishing felt with a limit point detection window. The present invention also relates to a method for mechanical-chemical polishing of a substrate using a chemical mechanical polishing felt with a limit point detection window. In the manufacture of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive and dielectric materials are deposited on or removed from a semiconductor surface (known as a "wafer"). Thin layers of conductive, semiconductive, and dielectric materials can be deposited by many deposition techniques. Conventional deposition techniques in modern processing include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating (ECP). When layers of materials are successively deposited and removed, the upper surface of the slab becomes non-planar. Since the subsequent processing of the semiconductor (eg metallization) requires the wafer to have a flat surface, the wafer must be planarized. Planarization is useful for removing unwanted surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice deterioration, scratches, and polluted layers or materials. Mechano-chemical planarization, or mechano-chemical polishing (CMP), is a conventional technique used to planarize substrates, such as semiconductor wafers. In a conventional CMP, a wafer is attached to a support assembly and is positioned in contact with a polishing felt in a CMP apparatus. The support assembly provides the wafer with controllable pressure compressing it against the polishing felt. The felt is moved (e.g., rotated) relative to the wafer by an external control force. A polishing medium (e.g. a suspension) is simultaneously provided between the wafer and the polishing felt. The wafer surface is thus polished and made flat by the chemical and mechanical action of the surface of the felt and the polishing medium. A challenge presented by chemical mechanical polishing is the determination of when the substrate has been polished to the desired extent. In situ processes for determining the polishing endpoints have been developed. In situ optical limit determination techniques can be classified into two basic categories: 1. control of the reflected optical signal at a single wavelength; or 2. control of the reflected optical signal from wavelengths. multiple. Typical wavelengths used for the optical determination of the limiting point include those of the visible spectrum (for example from 400 to 700 nm), the ultraviolet spectrum (315 to 400 nm), and the infrared spectrum (for example 700 at 1000 nm). In U.S. Patent 5,433,651, Lustig et al. have described a single-wavelength polymer end point detection method in which light from a laser source is transmitted on a wafer surface and the reflected signal is monitored. When the composition on the wafer surface changes from one metal to another, the reflection coefficient varies. This variation of the reflection coefficient is then used to detect the polishing end point. In U.S. Patent 6,106,662, Bibby et al. described the use of a spectrometer to obtain a spectrum of intensity of light reflected in the visible light range of the optical spectrum. In metal CMP applications, Bibby et al. cite the use of the entire spectrum to detect the polishing end point. Mechano-chemical polishing felts with windows have been developed to adapt these optical endpoint determination techniques. Roberts describes, for example, in U.S. Patent 5,605,760 a polishing felt in which at least a portion of the felt is transparent to laser light over a wavelength range. Roberts teaches in some of the disclosed embodiments a polishing felt that includes a transparent window piece in an otherwise opaque felt. The window piece may be a transparent polymer bar or plug in a molded polishing felt.
    [0002] The bar or plug can be inserted in the molded state into the polishing felt (ie an "integral window"), or it can be installed in a cutout in the polishing felt after the operation molding (ie a "plug-in-place window"). Aliphatic isocyanate-based polyurethane materials, such as those described in U.S. Patent 6,984,163, have provided improved light transmission over a broad spectrum of light. The necessary durability required for demanding polishing applications is unfortunately lacking in these aliphatic polyurethane windows, 10 inter alfa. Conventional polymer-based endpoint detection windows often exhibit undesirable degradation upon exposure to light having a length of 330 to 425 nm. However, there is increasing pressure to use light at shorter wavelengths for endpoint detection purposes in semiconductor polishing applications to facilitate thinner layers of materials and smaller device sizes. In addition, semiconductor devices are becoming more complex with finer aspects and more layers of metallization. This trend requires improved performance for polishing consumables in order to maintain planarity and limit polishing defects. These can create breaks or short circuits in electrical conductive lines that would make the semiconductor device not functional. It is generally known that one approach to reduce polishing defects, such as micro scratches or machining marks, is to use a softer polishing layer material. There is therefore a trend towards the use of softer polishing layer materials to facilitate improved defectivity performance. Nevertheless, conventional window formulations do not fit well with such softer polishing layer materials, tending to increase polishing defectivity. There is therefore a continuing need for improved polymeric endpoint window formulations for use in mechano-chemical polishing felts. In particular there is a continuing need for polymeric endpoint window formulations having a hardness of 65 Shore D, coupled with an elongation at break <300% and a double pass transmission at 400 nm, DPT400 of 25 at 100%; wherein the window formulations do not exhibit undesirable window deformation and exhibit the durability required for demanding polishing applications. The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: (i) an isocyanate-terminated urethane prepolymer having 5.5 to 9.5% by weight of NCO groups which unreacted, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, (b) a prepolymer polyol; ; and, (ii) a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. The present invention provides a chemical-mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product comprising: (i) an isocyanate-terminated urethane prepolymer having 5.5 to 9.5% wt. unreacted, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, b) a prepolymer polyol; ; and, (ii) a hardener system comprising: 0 to 90 ° A) by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curing agent having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and wherein the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate, and a semiconductor substrate.
    [0003] The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product comprising: (i) an isocyanate-terminated urethane prepolymer having 5.5 to 9.5% wt. unreacted, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, (b) a prepolymer polyol; ; and, (ii) a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; wherein the hardener system has a plurality of reactive hydrogen groups and the isocyanate-terminated urethane prepolymer has a plurality of unreacted NCO groups; and wherein a stoichiometric ratio of reactive hydrogen groups to unreacted NCO groups is 0.7 to 1.2. The present invention provides a mechano-chemical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: (i) an isocyanate-terminated urethane prepolymer having 5.5 to 9.5 wt.% NCO groups which have unreacted, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, (b) a prepolymer polyol; ; and, (ii) a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curing agent having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and, wherein the limit point detection window has a density 1 g / cm3; porosity less than 0.1% by volume; a Shore D hardness of 35 to 65; elongation at break <300 ° h; and a 400 nm double pass transmission, DPT400, of 25 to 100%.
    [0004] The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product comprising: (i) an isocyanate-terminated urethane prepolymer having 5.5 to 9.5% wt. unreacted, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, b) a prepolymer polyol; ; and, (ii) a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curing agent having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and, wherein the limit point detection window has a density g / cm3; porosity less than 0.1% by volume; a Shore D hardness of 35 to 65; elongation at break <300 ° h; a 400-pass double-pass transmission, DTP400, of 25 to 100%; a 800-pass double-pass transmission, DTP800, from 40 to 100 and, wherein the boundary-detection window also has a double-pass transmission delta between 800 nm and 400 nm, ADPT800400, <30%. The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: (i) an isocyanate-terminated urethane prepolymer having 5.5 to 9.5 wt.% NCO groups which have unreacted, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, (b) a prepolymer polyol; ; and, (ii) a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curing agent having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; wherein the polishing surface has a pattern of helical grooves formed therein; and wherein the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. The present invention provides a method of manufacturing a chemical mechanical polishing felt of the present invention, comprising: providing a polishing layer having a polishing surface; providing an isocyanate-terminated urethane prepolymer having from 5.5 to 9.5% by weight of unreacted NCO groups, wherein the isocyanate-terminated urethane prepolymer is a reaction product ingredients comprising: a polyfunctional aromatic isocyanate; and, a prepolymer polyol; providing a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a limit point detection window from the product; assembling the boundary point detection window with the polishing layer to provide a chemical mechanical polishing felt. According to a particular characteristic, the limit point detection window is an integral window. The present invention provides a method of manufacturing a chemical mechanical polishing felt of the present invention, comprising: providing a polishing layer having a polishing surface; providing an isocyanate-terminated urethane prepolymer having 5.5 to 9.5% by weight of unreacted NCO groups; providing a hardener system, comprising: 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; combining the isocyanate-terminated urethane prepolymer and hardener system to form a combination; let it react from the combination to form a product; forming a limit point detection window from the product; assembling the boundary point detection window with the polishing layer to provide a chemical mechanical polishing felt; wherein the limit point detection window is an integral window.
    [0005] The present invention provides a method of polishing a substrate, comprising: providing a chemical mechanical polishing apparatus having a disk (or plate), a light source and a photosensor; providing at least one substrate; providing a chemical mechanical polishing felt according to the present invention; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the light reflected from the surface of the substrate back through the limit point detection window incident on the photosensor.
    [0006] The present invention provides a method of polishing a substrate, comprising: providing a chemical mechanical polishing apparatus having a disk, a light source and a photosensor; providing at least one substrate; providing a chemical mechanical polishing felt according to the present invention; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the light reflected from the surface of the substrate back through the limit point detection window incident on the photosensor; wherein the at least one substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.
    [0007] BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a plot of the double pass transmission, DPT, as a function of the measured light wavelength under the conditions given in the examples for a limit point detection window prepared according to the comparative example. C3. Figure 2 is a plot of the double pass transmission, DPT, as a function of the measured light wavelength under the conditions given in the examples for a limit point detection window prepared according to Comparative Example C4.
    [0008] Figure 3 is a schematic plot of the double pass transmission, DPT, as a function of the wavelength of light as measured under the conditions given in the examples for a limit point detection window prepared according to Example 3. Figure 4 is a schematic plot of the double pass transmission, DPT, as a function of the wavelength of light as measured under the conditions given in the examples for a limit point detection window prepared according to Example 4. FIG. 5 is a schematic plot of the double pass transmission, DPT, as a function of the wavelength of light as measured under the conditions given in the examples for a limit point detection window prepared according to Example 5. FIG. 6 is a schematic diagram of the double-pass transmission, DPT, as a function of the wavelength of light as measured under the conditions given in the examples for a window. The end point detection prepared according to Example 6. DETAILED DESCRIPTION An important step in the substrate polishing operations is the determination of a process end point. A conventional in situ method for limit point detection involves providing a polishing felt with a window, which is transparent to select wavelengths of light. A beam of light is during polishing directed through the window to the wafer surface, where it is reflected back through the window to a detector (e.g. a spectrophotometer). On the basis of the feedback signal, properties of the substrate surface (e.g. film thickness on its top) can be determined for the detection of the limit point. In order to facilitate such polishing point limit detection techniques, the chemical mechanical polishing felt of the present invention has a limit point detection window comprising the reaction product of a single set of ingredients, which reaction product has a unique combination of hardness (i.e., Shore D hardness of 35 to 65) and low elongation at break (i.e. elongation at break <300 Vo) coupled with good optical properties (i.e., a 400-fold double pass transmission, DPT400, 25-100%) to facilitate the detection of polishing boundary point; wherein the endpoint detection window formulation does not exhibit undesirable window deformation (i.e., excessive swelling) and has the durability necessary for demanding polishing applications. The term "polishing medium" as used herein and in the appended claims includes polishing solutions containing particles and polishing solutions that do not contain particles, such as reactive and abrasive-free liquid polishing solutions. The term "double pass transmission" or "DPT" as used here and in the
    [0009]
    [0010] 1. appended with reference to a limit point detection window is determined using the following equation: DPT = - IWD) (IAsi - IAD) where IWsi, 1W0, IAsi, and IAD are measured using a Verity SP2006 Spectral Interferometer comprising an SD1024F spectrograph, a xenon flash lamp, and a 3mm optical fiber cable by placing a light-emitting surface of the 3mm optical fiber cable against (and perpendicular to) a first face of the detection window limit point at a point of origin, directing the light through the thickness, Tw, of the window and measuring at the point of origin the intensity of the light reflected back through the thickness of the window , Tw, from a surface disposed against a second face of the limit point detection window substantially parallel to the first face; where IWs; is a measure of the intensity of light that passes through the window from the point of origin and is reflected from the surface of a silicon control wafer placed against a second face of the window back through the window to the point of origin; where IWD is a measure of the intensity of light that passes from the point of origin through the window and is reflected from the surface of a black body and back through the window to the point of origin; where IAsi is a measure of the intensity of light passing from the point of origin through an air thickness equivalent to the thickness, Tw, of the endpoint detection window, which is reflected from the surface of a silicon control wafer placed perpendicular to the light emitting surface of the 3 mm optical fiber cable and which is reflected back through the air thickness to the point of origin; and, where IAD is a measure of the intensity of light reflected from a black body on the light emitting surface of the 3 mm optical fiber cable.
    [0011] The term "DPT400" as used herein and in the appended claims is TPD presented by a limit point detection window for light having a wavelength of 400 nm. The term "DPT800" as used herein and in the appended claims is TPD presented by a limit point detection window for light having a wavelength of 800 nm. The term "double pass transmission delta between 800 nm and 400 nm" or "ADPTsoo-eon" as used herein and in the appended claims is the difference of the double pass transmission presented by a limit point detection window for the light having a wavelength of 800 nm and for light having a wavelength of 400 nm determined using the following equation: ADPT800-400 = DPT800 - DPT400 The chemical mechanical polishing felt of the present invention The invention comprises: a polishing layer having a polishing surface, and a limit point detection window wherein the end point detection window comprises an ingredient reaction product comprising: (i) a prepolymer isocyanate-terminated urethane having from 5.5 to 9.5% by weight (preferably 5.75 to 9.0% by weight) of unreacted NCO groups, wherein the prepolymer urethane-terminated isocyanate is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, (b) a prepolymer polyol; and (ii) a hardener system comprising: 0 to 90 wt.% (preferably 0 to 75 wt.%, more preferably 0 to 70 wt.%) of a difunctional hardener; and from 10 to 100% by weight (preferably from 25 to 100% by weight, more preferably from 30 to 100% by weight) of an amine initiated polyol curing agent having at least one nitrogen atom (from preferably one to four nitrogen atoms, still more preferably two to four nitrogen atoms, still more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six, more preferably from three to five, most preferably four) hydroxyl groups per molecule. The polishing layer of the chemical mechanical polishing felt of the present invention has a polishing surface adapted to polish a substrate. The polishing surface is preferably adapted to polish a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. The polishing surface is even more suitable for polishing a semiconductor substrate. The polishing layer of the chemical mechanical polishing felt of the present invention is preferably made of a polymeric material comprising a polymer selected from polycarbonates, polysulfones, nylons, polyethers, polyesters, polystyrenes, polymers and the like. acrylics, poly (methyl methacrylates), polyvinyl chlorides, polyvinyl fluorides, polyethylenes, polypropylenes, polybutadienes, polyethyleneimines, polyurethanes, polyether sulfones, polyamides, polyetherimides, polyketones, epoxies, silicones, EPDMs, and combinations thereof. The polishing layer preferably comprises a polyurethane. Those skilled in the art will be able to choose a polishing layer having a usable thickness in a mechano-chemical polishing felt for a given polishing operation. The polishing layer preferably has an average thickness of 20 to 150 thousandths of an inch (more preferably 30 to 125 thousandths of an inch, more preferably 40 to 120 thousandths of an inch). The polishing surface preferably has a texture macro selected from at least one of perforations and grooves. The perforations may extend from the polishing surface partially or all through the thickness of the polishing layer. The grooves are preferably disposed on the polishing surface so that upon rotation of the chemical mechanical polishing felt during polishing, at least one groove sweeps the surface of the substrate which is polished. The polishing surface preferably has a macro-texture comprising at least one groove selected from the group consisting of curved grooves, linear grooves and combinations thereof. The polishing layer of the chemical-mechanical polishing felt of the present invention preferably has a polishing surface adapted to polish the substrate, wherein the polishing surface has a macro-texture comprising a pattern of grooves formed therein. . The groove pattern preferably comprises a plurality of grooves. The groove pattern is even better selected from a groove design. The groove design is preferably selected from the group consisting of concentric grooves (which may be circular or helical), curved grooves, hatched grooves (for example arranged as an XY grid across the felt surface), others regular designs (eg, 20 hexagons, triangles), tire tread patterns, irregular designs (eg fractal patterns), and combinations thereof. The groove design is even more preferred in the group consisting of arbitrary grooves, concentric grooves, helical grooves, hatched grooves, XY grid grooves, hexagonal grooves, triangular grooves, fractal grooves, and combinations of grooves. them. The polishing surface even more preferably has a helical groove pattern formed therein. The groove profile is preferably selected from a rectangular profile with straight side walls or the cross section of grooves may be "V" shaped, "U" shaped, sawtooth, and combinations thereof. . The isocyanate-terminated urethane prepolymer used in the formation of the chemical-mechanical polishing felt end point window of the present invention is an isocyanate-terminated urethane prepolymer having from 5.5 to 9.5 % by weight (preferably from 5.75 to 9.0% by weight) of unreacted NCO groups, wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product, comprising: an aromatic polyfunctional isocyanate and a prepolymer polyol. The isocyanate-terminated urethane prepolymer used in the formation of the end point detection window of the chemical mechanical polishing felt of the present invention preferably contains an average of two reactive isocyanate groups (i.e. NCO) by polecule. The isocyanate-terminated urethane prepolymer used in the formation of the end point detection window of the chemical mechanical polishing felt of the present invention is preferably a low isocyanate-free isocyanate-terminated urethane prepolymer having a free toluene diisocyanate (TDI) monomer content of less than 0.1% by weight. The polyfunctional aromatic isocyanate used in the preparation of the isocyanate-terminated urethane prepolymer used in the formation of the end point detection window of the chemical mechanical polishing felt of the present invention is preferably an aromatic diisocyanate. The aromatic polyfunctional isocyanate is even more preferably selected from the group consisting of 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 4,4'-diphenylmethane diisocyanate; 1,5-naphthalene diisocyanate; tolidine diisocyanate; para-phenylene diisocyanate; xylylene diisocyanate; and mixtures thereof. The polyfunctional aromatic isocyanate used is even more preferably selected from the group consisting of 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; and mixtures thereof The prepolymer polyol used in the preparation of the isocyanate-terminated urethane prepolymer is preferably selected from the group consisting of diols, polyols, polyol diols, copolymers thereof, and mixtures thereof. The prepolymer polyol is even more preferably selected from the group consisting of polyether polyols (for example poly (oxytetramethylene) glycol, poly (oxypropylene) glycol, poly (oxyethylene) glycol); polycarbonate polyols; polyesters polyols; polycaprolactones polyols; mixtures thereof; and mixtures thereof with one or more low molecular weight polyols selected from the group consisting of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1.65 hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol. The prepolymer polyol is more preferably selected from the group consisting of at least one of polytetramethylene ether glycol (PTMEG); polypropylene ether glycols (PPG) and polyethylene ether glycols (PEG); optionally mixed with at least one low molecular weight polyol selected from the group consisting of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol. The prepolymer polyol further comprises PPG mixed with at least one of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol. The hardener system used in forming the chemical-mechanical polishing felt boundary point forming window of the present invention preferably contains: 0 to 90% by weight (preferably 0 to 75% by weight) more preferably from 0 to 70% by weight) of a difunctional hardener; and from 10 to 100% by weight (preferably from 25 to 100% by weight, more preferably from 30 to 100% by weight) of an amine initiated polyol curing agent having at least one nitrogen atom ( preferably one to four nitrogen atoms, more preferably two to four nitrogen atoms, still more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six; still more preferably from three to five, most preferably four) hydroxyl groups per molecule. The hardener system used in forming the boundary point detection window of the electrochemical polishing felt of the present invention preferably contains <1% by weight (preferably <0.1% by weight; 0.01% by weight) of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule. The hardener system used in forming the chemical-mechanical polishing felt boundary point window of the present invention further comprises: from 0 to 90 ° A by weight (preferably from 0 to 75 ° C) weight, more preferably from 0 to 70% by weight) of a difunctional hardener; from 10 to 100% by weight (preferably from 25 to 100% by weight, more preferably from 30 to 100% by weight) of an amine initiated polyol curing agent having at least one nitrogen atom (from preferably one to four nitrogen atoms, more preferably two to four nitrogen atoms, still more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six; from three to five, most preferably four) hydroxyl groups per molecule; and, <0.001% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule. The hardener system used in forming the chemical-mechanical polishing felt boundary point window of the present invention comprises: 0 to 90% by weight (preferably 0 to 75% by weight; 0 to 70% by weight) of a difunctional hardener; from 10 to 100% by weight (preferably from 25 to 100% by weight, more preferably from 30 to 100% by weight) of an amine initiated polyol curing agent having at least one nitrogen atom (from preferably one to four nitrogen atoms, more preferably two to four nitrogen atoms, still more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six; from three to five, most preferably four) hydroxyl groups per molecule; and, a detectable amount of a high molecular weight polyol curing agent having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule. The amine-initiated polyol curing agent used in the formation of the chemical-mechanical polishing felt boundary point forming window of the present invention contains at least one nitrogen atom (preferably one to four nitrogen atoms). more preferably two to four nitrogen atoms, still more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six, more preferably three to five, most preferably four ) hydroxyl groups per molecule. The amine-initiated polyol hardener used in the formation of the limit point detection window of the chemical mechanical polishing felt of the present invention preferably has a number average molecular weight, MN, <700 (even better, of 150 to 650, more preferably 200 to 500, particularly preferably 250 to 300).
    [0012] The amine-initiated polyol curing agent used in the formation of the chemical-mechanical polishing-off felt end point window of the present invention preferably has a hydroxyl number (as determined by the ASTM D4274-11 test method) from 350 to 1200 mg KOH / g (more preferably 400 to 1000 mg KOH / g, more preferably 600 to 850 mg KOH / g). Examples of commercially available amine-initiated polyol curatives include the Voranol family (C) of amine-initiated polyols (available from The Dow Chemical Company); QuadrolC) Specialty Polyols (N, N, N ', N'-tetrakis (2-hydroxypropylethylenediamine)) (available from BASF); Plucarol amine-based polyols (available from BASF); Multranol C amine polyols (available from Bayer MaterialScience LLC); triisopropanolamine (TIPA) (available from The Dow Chemical Company); and triethanolamine (TEA) (available from Mallinckrodt Baker Inc.). Many preferred amine-initiated polyol curatives are listed in TABLE 1. TABLE 1 Polyol Hardener Initiated by MN Number Hydroxyl Number One amine OH groups per (mg KOH / g) molecule Triethanolamine 3 149 1130 Triisopropanolamine 3,182,877 Polyol MULTRANOLC) 9138 3 240 700 Polyol MULTRANOLC) 9170 3 481 350 Polyol VORANOLC) 391 4 568 391 Polyol VORANOLC) 640 4 352 638 Polyol VORANOLC) 800 4 280 801 Polyol QUADROL® 4 292 770 Polyol MULTRANOLC) 4050 4 356 630 Polyol MULTRANOLC) 4063 4 488 460 Polyol MULTRANOLO 8114 4 568 395 Polyol MULTRANOLC) 8120 4 623 360 Polyol MULTRANOLC) 9181 4 291 770 Polyol VORANOLC) 202 5 590 475 Without wishing to be bound by theory, in addition to promoting the equilibrium desired physical properties of the boundary point detection window produced therewith, it is believed that the concentration of the amine initiated polyol hardener used in the hardener system also To catalyze its reaction and the reaction of any difunctional hardener in the hardener system with the unreacted isocyanate groups (NCO) present in the isocyanate-terminated urethane prepolymer. The difunctional hardener used in forming the boundary point detection window of the chemical mechanical polishing felt of the present invention is preferably selected from diols and diamines. The difunctional hardener is even more preferably a difunctional aromatic hardener selected from the group consisting of diethyltoluenediamine (DETDA); 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof (e.g., 3,5-diethyltoluene-2,6-diamine); 4,4'-bis- (sec-butylamino) -diphenylmethane; 1,4-bis (sec-butylamino) benzene; 4,4'-methylene-bis- (2-chloroaniline); 4,4'-methylene-bis (3-chloro-2,6-diethylaniline) (MCDEA); poly (tetramethylene oxide) di-p-aminobenzoate; N, N'-dialkyldiaminodiphenylmethane; p, p-methylenedianiline (MDA); m-phenylenediamine (MPDA); 4,4'-methylene-bis- (2-chloroaniline) (MBOCA); 4,4'-methylene-bis- (2,6-diethylaniline) (MDEA); 4,4'-methylene-bis- (2,3-dichloroaniline) (MDCA); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyldiphenylmethane; 2,2 ', 3,3'-tetrachlorodiinodiphenylmethane; trimethylene glycol di-p-aminobenzoate; and mixtures thereof. The difunctional aromatic hardener used is most preferably selected from the group consisting of 4,4'-methylene-bis- (2-chloroaniline) (MBOCA); 4,4'-methylenebis- (3-chloro-2,6-diethylaniline) (MCDEA); and isomers thereof. The difunctional aromatic hardener used is still more preferably 4,4'-methylene-bis- (2-chloroaniline) (MBOCA). The sum of the reactive hydrogen groups (ie, the sum of the amine groups (NH2) and the hydroxyl groups (OH)) contained in the constituents of the hardener system divided by the isocyanate groups (NCO) which do not Not reacted in the isocyanate-terminated urethane prepolymer (i.e., the stoichiometric ratio) used in the formation of the chemical-mechanical polishing felt boundary point window of the present invention is preferably from 0.7 to 1.2 (preferably from 0.8 to 1.10, more preferably from 0.95 to 1.05, most preferably from 0.98 to 1.02). The limit point detection window of the chemical mechanical polishing felt of the present invention preferably has a density. 1 g / cm 3 (preferably 1.05 to 1.2 g / cm 3, more preferably 1.1 to 1.2 g / cm 3); porosity less than 0.1% by volume; a Shore D hardness of 35 to 65; an elongation at break <300 ° h (preferably 100 to <300%, more preferably 150 to 250 ° h, more preferably 175 to 245 ° A); and, a 400-pass double pass transmission, DTP400, of 25 to 100% (preferably 25 to 85%), more preferably 25 to 80%; more preferably 25 to 65%) measured under the conditions given here in the examples. The chemical-mechanical polishing felt boundary point detection window of the present invention preferably has a double-pass transmission at 800 nm, DPT800, of 25 to 100 ° h (preferably 30 to 85%; from 45 to 80%, more preferably from 40 to 65%) measured under the conditions given here in the examples. The chemical-mechanical polishing felt boundary point detection window of the present invention preferably has a DPT800 of 25 to 100 ° h (preferably 30 to 85%, more preferably 45 to 80 ° A); more preferably 40 to 65 ° / 0) measured under the conditions given here in the examples; and a 400 nm double pass transmission, DPT400, of 25 to 100 ° h (preferably 25 to 85%, more preferably 25 to 80 ° h, more preferably 25 to 65 ° / 0) measured under the conditions given here in the examples; and, wherein the limit point detection window has a double pass transmission delta between 800 nm and 400 nm, ADPT800-400, <30% (preferably 5.25%, more preferably 15%, much better still .5 ° 10 ° A)) measured under the conditions given here in the examples. The limit point detection window of the chemical mechanical polishing felt of the present invention is preferably selected from a plug window in place and an integral window. The limit point detection window is even better an integral window incorporated in the polishing layer. The chemical-mechanical polishing felt of the present invention optionally further comprises at least one additional layer assembled with the polishing layer. The polishing layer is preferably bonded with the at least one additional layer using an adhesive. The adhesive may be selected from pressure sensitive adhesives, hot melt adhesives, contact adhesives, and combinations thereof. The adhesive is preferably a hot melt adhesive or a pressure sensitive adhesive. The adhesive is even better a heat-resistant adhesive. The chemical mechanical polishing felt of the present invention is preferably adapted to be assembled with a disk of a polishing machine. The chemical mechanical polishing felt is preferably adapted to be assembled with the disk of the polishing machine. The chemical mechanical polishing cloth may preferably be attached to the disk using at least one of a pressure sensitive adhesive and vacuum. The chemical mechanical polishing felt of the present invention preferably further comprises a pressure sensitive disc adhesive to facilitate attachment to the disc. Those skilled in the art will know how to choose a pressure sensitive adhesive suitable for use as the pressure sensitive disc adhesive. The chemical mechanical polishing felt of the present invention will also preferably include a release protector applied to the pressure sensitive disc adhesive. The method of manufacturing a chemical mechanical polishing felt of the present invention comprises: providing a polishing layer having a polishing surface; providing an isocyanate-terminated urethane prepolymer having from 5.5 to 9.5% by weight (preferably from 5.75 to 9.0% by weight) of NCO groups which do not have reacted wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: (a) a polyfunctional aromatic isocyanate; and, (b) a prepolymer polyol; providing a hardener system comprising: from 0 to 90% by weight (preferably from 0 to 75% by weight, more preferably from 0 to 70% by weight) of a difunctional hardener; and from 10 to 100% by weight (preferably from 25 to 100% by weight, more preferably from 30 to 100% by weight) of an amine initiated polyol curing agent having at least one nitrogen atom ( preferably one to four atoms, more preferably two to four nitrogen atoms, more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six, more preferably three to five, most preferably four) hydroxyl groups per molecule; combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a limit point detection window from the product; assembling the boundary point detection window with the polishing layer to provide a chemical mechanical polishing felt. The limit point detection window is preferably assembled with the polishing layer as an integral window incorporated in the polishing layer using known techniques or as a plug-in-place window incorporated into the polishing felt. using known techniques. The boundary detection window is even better incorporated into the polishing layer as an integral window. The method of the present invention for mechano-chemical polishing of a substrate comprises: providing a mechanical-chemical polishing apparatus having a disk, a light source and a photosensor (preferably a multi-sensor spectrograph); providing at least one polishing substrate (wherein the substrate is preferably selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; wherein the substrate is even better semiconductor substrate, wherein the substrate is still more preferably a semiconductor wafer); providing a chemical mechanical polishing felt of the present invention; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between a polishing surface of the chemical mechanical polishing felt and the substrate (wherein the polishing medium is preferably selected from the group consisting of a polishing slurry and a reactive liquid formulation containing no abrasive); creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the light reflected from the surface of the substrate back through the limit point detection window incident on the photosensor. The polishing boundary point is preferably determined on the basis of an analysis of a wavelength of light reflected from the surface of the substrate and transmitted through the limit point detection window, where the light has a length wavelength> 370 nm to 800 nm. The polishing end point is further best determined on the basis of a multiple wavelength analysis of light reflected from the surface of the substrate and transmitted through the endpoint detection window, where one of the lengths of The wave analyzed has a wavelength> 370 nm at 800 nm. Some embodiments of the present invention will now be described in detail in the following Examples.
    [0013] Comparative Examples C1-C4 and Examples 1-6 Limit point detection windows were prepared according to the formulation details provided in TABLE 2. The window prepolymer was mixed with the components of the curative system using a vortex mixer at 1000 rpm for 30 seconds. All of the raw materials with the exception of the difunctional hardener (i.e., MBOCA and MCDEA) were maintained at a pre-mixing temperature of 60 ° C. MCDEA and MBOCA were maintained, when used, at a pre-mixing temperature of 120 ° C.
    [0014] The stoichiometric ratio between the window prepolymer and the hardener system used for the endpoint detection windows is provided in TABLE 2 as the ratio of the reactive hydrogen groups (i.e., the sum of the -OH groups and -NH2 groups) in the hardener system relative to the unreacted isocyanate NCO groups in the isocyanate-terminated urethane prepolymer. In each of the examples, the isocyanate-terminated urethane prepolymer and the hardener system were mixed together using a vortex mixer. After mixing, the combination was dispensed into a 2 mm x 125 mm x 185 mm pocket mold. The pocket mold with the dispensed combination was then cured in an oven for eighteen (18) hours. The set point temperature for the oven was initially set at 93 ° C for the first twenty (20) minutes; at 104 ° C for the next fifteen (15) hours and forty (40) minutes; and was then lowered to 21 ° C during the final two (2) hours. The pocket mold and its contents were then removed from the oven and the produced end-point detection window was then removed from the pocket mold. Ex No. Urethane Prepolymer (° / 0 NCO) Hardener System (H active / NCO) with stoichiometric isocyanate terminations Amine Initiated Polyol Hardener P1 Difunctional Aromatic Hardener P2 (P1) (° / 0 by weight) (P2 (% by weight) C1 Adiprene® LFG963A 5.83 Voranol® 800 9.1 MbOCA 90.9 1.0 C2 Adiprene® LF750D 8.86 Voranol® 800 --- MCDEA 100 1.0 C3 Adiprene® LF750D 8, 86 Voranol® 800 9,1 MbOCA 90.9 1.0 C4 Adiprene® LFG963A 5.83 Voranol® 800 33.3 MbOCA 66.7 1.0 Adiprene® LFG963A 5.83 Voranol® 800 50.0 MbOCA 50, 0 1.0 2 Adiprene® LF750D 8.86 Voranol® 800 33.3 MbOCA 66.7 1.0 3 Adiprene® LF750D 8.86 Voranol® 800 50.0 MbOCA 50.0 1.0 4 Adiprene® LF750D 8 86 Voranol® 800 90.9 MbOCA 9.1 1.0 5 Adiprene® LF750D 8.86 Voranol® 800 100 MbOCA --- 1.0 6 Adiprene® LFG963A 5.83 Voranol® 800 9.1 MbOCA 90.9 1 The Adiprene® LFG963A isocyanate-terminated urethane prepolymer is available from Chemtura Corporation. The Adiprene® LF750D isocyanate-terminated urethane prepolymer is available from Chemtura Corporation. The Voranol® 800 amine-initiated polyol curing agent having a number average molecular weight, MN, of 280; two nitrogen atoms; and an average of four hydroxyl groups per molecule is available from The Dow Chemical Company.
    [0015] The limit point detection windows prepared according to each of the Comparative Examples C1-C4 and Examples 1-6 were analyzed to determine the physical properties as given in TABLE 3. The DPT400 and DPT800 transmission data cited for the above were determined. limit point detection windows using the following equation: DPT = (IWsi - IWD) (IAsi - IAD) where IWsi, IWD, IAsi, and IAD are measured using a Verity SP2006 Spectral Interferometer including an SD1024F spectrograph, 10 a Xenon flash lamp and a 3mm optical fiber cable by placing a light-emitting surface of the 3mm optical fiber cable against (and perpendicular to) a first face of the limit point detection window at a point d origin, directing light at a given wavelength (i.e. at 400 nm and 800 nm, respectively) through the thickness, Tw, of the window and measuring at the point of origin light intensity of the given wavelength reflected back through the thickness of the window, Tw, from a surface disposed against a second face of the limit point detection window substantially parallel to the first face; where IWsi is a measure of the intensity of light at the given wavelength that passes through the window from the point of origin and is reflected from the surface of a silicon control wafer against a second face of the window back through the window to the point of origin; where IWD is a measure of the light intensity at the given wavelength that passes from the point of origin through the window and is reflected from the surface of a black body and back to through the window to the point of origin; where IA if is a measure of the light intensity at the given length which passes from the point of origin through an air thickness equivalent to the thickness, Tw, of the limit point detection window, which is reflected from the surface of a silicon control wafer placed perpendicular to the light emitting surface of the 3 mm optical fiber cable and which is reflected back through the air thickness to the d-point origin; and, where IAD is a measure of the intensity of light at the given wavelength reflected from a blackbody on the light emitting surface of the 3 mm optical fiber cable. The graphs of the observed double pass transmission as a function of the wavelength of light from 300 to 800 nm for the endpoint detection windows prepared according to Comparative Examples C3-C4 and Examples 3-6 are respectively described. in Figures 1-6.
    [0016] The density data cited for the endpoint detection windows were determined according to ASTM D1622. The Shore D hardness data cited for the endpoint detection windows were determined according to ASTM D2240. The tensile properties of the endpoint detection windows (i.e. tensile strength and elongation at break) were measured according to ASTM D1708-10 using an Alliance RT / 5 mechanical testing device available from MTS Systems Corporation at a crosshead speed of 50.8 cm / min. The entire test of tensile properties was carried out in a temperature and humidity controlled laboratory set at 23 ° C and a relative humidity of 50%. All test samples were packaged under the laboratory conditions cited for 5 days prior to testing. Tensile strength (MPa) and elongation at break (%) were determined for each endpoint detection window material from tension-strain curves of four replicate samples. Ex. Properties No. Double Pass Through, DPT, Density (g / crn3) Hardness Resistance Elongation at break at k (in ° h) Shore D at tensile (%) (15 s) (MPa) k = 400 nm k = 800 nm 3,800_400 Cl 8 64 56 1,13 55 24,9 492 C2 17 57 40 1,12 50 17,6 281 C3 0 33 33 1,18 69 50,5 296 C4 1 41 40 1,18 67 46.3 247 1 36 58 22 1.11 43 13.0 205 2 40 61 21 1.1 40 12.6 210 3 26 54 28 1.16 61 37.4 245 4 36 62 26 1.16 55 29 5,195 5 45 55 10 1,16 39 23,1 208 6 41 46 5 1,16 39 22,2 204
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A chemical mechanical polishing felt characterized in that it comprises: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: i) an isocyanate-terminated urethane prepolymer having 5.5 to 9.5% by weight of unreacted NCO groups wherein the isocyanate-terminated urethane prepolymer is an ingredient reaction product comprising: a) a polyfunctional aromatic isocyanate; and, b) a prepolymer polyol; and, a hardener system, comprising: from 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curing agent having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule.
    [0002]
    2. A chemical mechanical polishing felt according to claim 1, characterized in that the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semi-substrate. -driver.
    [0003]
    The chemical mechanical polishing mat according to claim 1, characterized in that the hardener system has a plurality of reactive hydrogen groups and the isocyanate-terminated urethane prepolymer has a plurality of unreacted NCO groups; and wherein a stoichiometric ratio of reactive hydrogen groups to unreacted NCO groups is 0.7 to 1.2.
    [0004]
    4. The chemical mechanical polishing felt according to claim 1, characterized in that the limit point detection window has a density> 1 g / cm3; porosity less than by volume; Shore D hardness of 35 to 65; elongation at break <300 ° h; and a 400 nm double pass transmission, DPT400, of 25 to 100 ° h.
    [0005]
    The chemical mechanical polishing pad according to claim 4, characterized in that the limit point detection window also has a double-pass transmission at 800 nm, DPT800, of 40 to 100%, and wherein the detection window The end point also has a double pass transmission delta between 800 nm and 400 nm, 1DPT800_400, <30%.
    [0006]
    The chemical mechanical polishing felt of claim 2, characterized in that the polishing surface has a helical groove pattern formed therein.
    [0007]
    A method of manufacturing a chemical mechanical polishing felt according to claim 1, characterized by comprising: providing a polishing layer having a polishing surface; providing an isocyanate-terminated urethane prepolymer having from 5.5 to 9.5% by weight of unreacted NCO groups, wherein the isocyanate-terminated urethane prepolymer is a reaction product of ingredients comprising: an aromatic polyfunctional isocyanate; and, a prepolymer polyol; and, providing a hardener system comprising: from 0 to 90% by weight of a difunctional hardener; and from 10 to 100% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; Allowing it to react with the combination to form a product; forming a limit point detection window from the product; assembling the boundary point detection window with the polishing layer to provide a chemical mechanical polishing felt. 35
    [0008]
    8. Method according to claim 7, characterized in that the limit point detection window is an integral window.
    [0009]
    9. A method of polishing a substrate, characterized in that it comprises: providing a mechanical-chemical polishing apparatus having a disk, a light source and a photosensor; providing at least one substrate; providing a chemical mechanical polishing felt according to claim 1; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the light reflected from the surface of the substrate back through the limit point detection window incident on the photosensor.
    [0010]
    10. The method of claim 9, characterized in that the at least one substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.
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    同族专利:
    公开号 | 公开日
    CN105014527A|2015-11-04|
    KR20150124898A|2015-11-06|
    DE102015004928A1|2015-10-29|
    TWI616277B|2018-03-01|
    TW201609310A|2016-03-16|
    US9314897B2|2016-04-19|
    US20150306729A1|2015-10-29|
    FR3020297B1|2018-11-23|
    JP6502159B2|2019-04-17|
    JP2015211224A|2015-11-24|
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    法律状态:
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    优先权:
    申请号 | 申请日 | 专利标题
    US14/264,440|US9314897B2|2014-04-29|2014-04-29|Chemical mechanical polishing pad with endpoint detection window|
    US14264440|2014-04-29|
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